Abstract:
Cadmium Sulphide (CdS) thin films were electrodeposited onto Indium Tin
Oxide (ITO) coated glass substrates from an aqueous solution containing
0.3M CdCl2 and 0.03M Na2S2O3. Properties of CdS thin films prepared at
different deposition voltages, time periods and temperatures and different
annealing temperatures were investigated using current-voltage (I-V)
characteristic plots. Best quality CdS layers were found to form under
deposition conditions of -1.13V for a period of 45 minutes in a solution at a
temperature of 46° C with 1.4pH. The best film was formed after annealing
at 400° C for a period of 20 min. The same procedure was followed by taking
Thiourea [SC(NH2)2] as the Sulphur (S) source. The properties of CdS thin
films prepared by changing electrode configuration and cleaning procedure
using above two electrolytes were compared using current-voltage
characteristic plots. A significant improvement of current was found of
samples prepared using later electrolyte compared that with the former
electrolyte. Further, analysis of XRD spectra showed hexagonal crystal
structure of CdS films, confirming the quality of films prepared by the later
method.
