Abstract:
Strontium hexaferrite (SrFe^Oig) is a prime candidate in the application of magnetic memory devices and microwave devices. The structure of rf sputtered Strontium ferrite strongly depends on the oxygen partial pressure during sputtering according to X-ray diffraction (XRD) measurements. The optimum oxygen partial pressure and the best target composition suitable to synthesize the Strontium hexaferrite have been investigated. A non-magnetic phase of Strontium ferrite (SrFe20 4) was completely crystallized at 10% of oxygen, as the oxygen partial pressure was increased from 0% (pure Ar) to 10%.
