Strong Hot Carrier Effects in Single Nanowire Heterostructures

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dc.contributor.author Shojaei, I.A.
dc.contributor.author Linser, S.
dc.contributor.author Jnawali, G.
dc.contributor.author Wickramasuriya, N.
dc.contributor.author Jackson, H.E.
dc.contributor.author Smith, L.E.
dc.contributor.author Kargar, F.
dc.contributor.author Balandin, A.A.
dc.contributor.author Yuan, X.
dc.contributor.author Caroff, P.
dc.contributor.author Tan, H.H.
dc.contributor.author Jagadish, C.
dc.date.accessioned 2022-10-14T03:50:36Z
dc.date.available 2022-10-14T03:50:36Z
dc.date.issued 2019-08-14
dc.identifier.citation Shojaei, I.A., Linser, S., Jnawali, G., Wickramasuriya, N., Jackson, H.E., Smith, L.E., Kargar, F., Balandin, A.A., Yuan, X., Caroff, P., Tan, H.H., and Jagadish, C., (2019). Strong Hot Carrier Effects in Single Nanowire Heterostructures. American Chemical Society (ACS) Nanoletters. en_US
dc.identifier.issn 1530-6984
dc.identifier.uri http://ir.lib.ruh.ac.lk/xmlui/handle/iruor/8817
dc.description.abstract We use transient Rayleigh scattering to study the thermalization of hot photoexcited carriers in single GaAs0.7Sb0.3/InP nanowire heterostructures. By comparing the energy loss rate in single core-only GaAs0.7Sb0.3 nanowires which do not show substantial hot carrier effects with the core–shell nanowires, we show that the presence of an InP shell substantially suppresses the longitudinal optical phonon emission rate at low temperatures which then leads to strong hot carrier effects. en_US
dc.language.iso en en_US
dc.publisher American Chemical Society (ACS) en_US
dc.subject Hot carrier effects en_US
dc.subject Hot phonons en_US
dc.subject Carrier thermalization en_US
dc.title Strong Hot Carrier Effects in Single Nanowire Heterostructures en_US
dc.type Article en_US


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