Abstract:
Cuprous oxide (n-Cu2O) and CuSCN (p-type) layers were deposited on
copper substrates using photo-electrochemical method to form p-n junction
solar cells. Further, n-Cu2O layers were deposited on Indium Tin Oxide
(ITO) substrates using electro-deposition method. The current-voltage (I-V)
characteristics of the above layers were measured and I-V characteristics of
n-Cu2O layers on copper (Cu) and ITO substrates deposited using above two
methods were compared. It was found that when Cu2O layers deposited on
ITO substrate by electro-deposition technique produced higher cell
performance compared to the n-Cu2O layers deposited on Cu substrate by
photo-electrochemical technique.
