Abstract:
The photocurrent quantum efficiency of p-type, 3 -CuCNS and Cul
photocathodes sensitized with different dyes are measured as a function
of the surface concentration of the dye and concentration of the electron
acceptor in the solution. Deposition of trace quantities of platinum
on top of the dye layer is found to increase the stability and the
photocurrent quantum efficiency. Also the results are in agreement with
the calculations based on kinetics of charge transfer and photophysical
processes of the sensitized interface.
It is shown that if a thin layer of a solid substrate having
large interstitial cavities is deposited on a semiconductor surface it
can be made to absorb dyes without formation of aggregates. Consequently
a photoelectrode made by this technique gives higher photocurrent quantum
efficiencies owing to a reduction in the rate of concentration quenching.
Observations on p-type 3 -CuCNS photocathode sensitized after deposition
of a thin layer of Cuprous Cobalticyanide (Cu->{ 00 (CN)^} ) are presented
O D
to illustrate the phenomenon.
, Impurity energy band structures of p-type, 3 -CuCNS are found.
The n-type is seen to be sensitive to the visible spectrum. The solid
state photovoltaic cells and photoelectrochemical cells are found based
on this materials.
Investigating photochemical oxidation and reduction of Mnlv Oxide,
it is found that in principle a water cleavage process consisting of two
photosystems can be based on this material in the presence of a sensitizer
Here, Ti0£ acts as the sensitizer.
