Abstract:
n-Cu2O/p-CuI junction photo-electrode was fabricated on copper sheets to
make a solid state photo-voltaic cell. A photo current enhancement was
found for the junction photo-electrode because of the efficient charge
separation process operated at the junction compared to that of the solar cells
fabricated from bare semiconductor thin films. Mainly the photo-current
generation was found due to the band to band transitions of n-Cu2O films in
the junction photo-electrode. AFM, XRD and optical absorption properties
of the materials were studied to explain the photo-current generation of the
solar cell. It was found that the sample was highly stable with time under
illumination of light. Power conversion efficiency reached is nearly 2.4% for
n-Cu2O/p-CuI junction photo-electrode.