Characteristics of n-Cu2O/p-CuI junction photo-electrode in  relation to solar energy conversion devices

dc.contributor.author	Rajapaksha, R.D.A.A.
dc.contributor.author	Fernando, C.A.N.
dc.contributor.author	Foo, K.L.
dc.contributor.author	Hashim, U.
dc.contributor.author	Balakrishna, R.G.
dc.date.accessioned	2023-01-31T06:17:52Z
dc.date.available	2023-01-31T06:17:52Z
dc.date.issued	2014-01-22
dc.identifier.issn	1391-8796
dc.identifier.uri	http://ir.lib.ruh.ac.lk/xmlui/handle/iruor/10539
dc.description.abstract	n-Cu2O/p-CuI junction photo-electrode was fabricated on copper sheets to make a solid state photo-voltaic cell. A photo current enhancement was found for the junction photo-electrode because of the efficient charge separation process operated at the junction compared to that of the solar cells fabricated from bare semiconductor thin films. Mainly the photo-current generation was found due to the band to band transitions of n-Cu2O films in the junction photo-electrode. AFM, XRD and optical absorption properties of the materials were studied to explain the photo-current generation of the solar cell. It was found that the sample was highly stable with time under illumination of light. Power conversion efficiency reached is nearly 2.4% for n-Cu2O/p-CuI junction photo-electrode.	en_US
dc.language.iso	en	en_US
dc.publisher	Faculty of Science, University of Ruhuna, Matara, Sri Lanka	en_US
dc.subject	n-Cu2O, p-CuI	en_US
dc.subject	solid state photovoltaic cell	en_US
dc.title	Characteristics of n-Cu2O/p-CuI junction photo-electrode in relation to solar energy conversion devices	en_US
dc.type	Article	en_US